Solid State Device Physics (Second Edition)

nov. 2024 · American Academic Press

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The Physics and 6 experiments of some electronic devices are documented in this book like never before (to our knowledge). The experiments are on room temperature I-V characteristics of npn Bipolar Junction Transistor (BJT) C828 in common base and in common emitter configurations; of n-channel Junction Field Effect transistor (n-JFET) 2N5457 in common source configuration; and on Unijunction Transistors (UJT) 2N494 and 2N493. The other 2 experiments are on design, construction and implementation of common emitter amplifier using npn BJT with voltage divider bias; and on temperature dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge). The book will be a great aid in teaching and learning for students majoring in physics.

In this 2nd edition, more carefully obtained data are presented. Texts of device Physics have been polished for more accurate arguments in explaining the data. Physics and experiments on I-V data of UJT are described and explained in detail using band models known from studies of nanostructure physics or microelectronics for M.S. students majoring in physics.

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Om forfatteren

Sujaul Chowdhury (s.chowdhury-phy@sust.edu), Ph.D., is a Professor in Department of Physics at Shahjalal University of Science and Technology. He received his B.Sc. and M.Sc. in Physics from Shahjalal University of Science and Technology, before earning his Ph.D. at The University of Glasgow in 2001. After completing his Ph.D., Dr. Chowdhury was a Humboldt Research Fellow for one year at The Max Planck Institute, Stuttgart. He is author of many books. His research interests include nanoelectronics, magnetotransport in semiconductor nanostructures, and Nanostructure Physics. Further details about the author and his CV are available at www.sust.edu/d/phy/faculty-profile-detail/157

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