Solid State Device Physics (third edition)

ruj 2026. · American Academic Press

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O ovoj e-knjizi

This book documents physics and 7 experiments on electronic devices like never before (to our knowledge). The experiments cover the room-temperature I-V characteristics of an NPN Bipolar Junction Transistor (BJT) C828 in common-base and common-emitter configurations; an n-channel Junction Field Effect Transistor (n-JFET) 2N5457 in common-source configuration; and a Uni-junction Transistor (UJT) 2N493. The other 3 experiments cover the design, construction, and implementation of a common-emitter amplifier using an NPN BJT with voltage-divider bias; the temperature-dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge); and the current-voltage characteristics of a solar cell. The book will be a great aid to teaching and learning for Physics majors.

In this 3rd edition, Professor Dr. M. Omar Faruk contributed a chapter on device physics of solar cells using band models known from studies of Nanostructure Physics or Microelectronics for M.S. students majoring in Physics. We have corrected the lapses in the chapter on device physics of the unijunction transistor. We polished the text of other chapters in places.

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O autoru

Dr Sujaul Chowdhury (s.chowdhury-phy@sust.edu) and Dr M. Omar Faruk are Professors in the Department of Physics at Shahjalal University of Science and Technology, Sylhet 3114, Bangladesh. Details about them are available on their departmental web pages at www.sust.edu

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